GP3D020A120B
DIODE SIL CARB 1.2KV 20A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ GP3D020A120B is a 1200V, 20A Silicon Carbide Schottky diode. This through-hole component, housed in a TO-247-2 package, offers a low forward voltage of 1.65V at 20A and a reverse leakage current of 40 µA at 1200V. The device features zero reverse recovery time, indicating superior switching performance. Operating across a junction temperature range of -55°C to 175°C, it is suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies. The capacitance at 1V and 1MHz is specified at 1179pF.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1179pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 20 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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