GP3D020A065B
DIODE SIL CARB 650V 20A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D020A065B is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component features a 650V reverse voltage rating and a 20A average rectified current capability. Its low forward voltage drop of 1.7V at 20A and zero reverse recovery time contribute to enhanced system efficiency. The device exhibits a reverse leakage current of 50 µA at 650V and a capacitance of 835pF at 1V and 1MHz. Packaged in a TO-247-2 through-hole configuration, it is suitable for operating temperatures ranging from -55°C to 175°C. This SiC diode is commonly deployed in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 835pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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