GP3D020A065A
DIODE SIL CARB 650V 20A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ GP3D020A065A is a 650V Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-220-2 package, offers a maximum forward voltage (Vf) of 1.65V at 30A and an average rectified current (Io) of 20A. Featuring a low reverse leakage of 75 µA at 650V and a junction operating temperature range of -55°C to 175°C, it exhibits no significant reverse recovery time above 500mA. With a capacitance of 1247pF at 1V and 1MHz, this device is suitable for applications in power supply, electric vehicle charging, and industrial motor control.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1247pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 30 A |
| Current - Reverse Leakage @ Vr | 75 µA @ 650 V |
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