GP3D015A120A
DIODE SIL CARB 1.2KV 15A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ GP3D015A120A is a Silicon Carbide (SiC) Schottky diode offering a 1200 V reverse voltage and a 15 A average rectified current (Io). This through-hole component, housed in a TO-220-2 package, features a low forward voltage drop of 1.6 V at 15 A and a minimal reverse leakage current of 30 µA at 1200 V. The GP3D015A120A exhibits a capacitance of 962 pF at 1 V and 1 MHz, with a specified operating junction temperature range of -55°C to 175°C. Its zero reverse recovery time (trr) makes it suitable for high-frequency power applications. This device is commonly utilized in power factor correction, electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 962pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 15 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 1200 V |
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