GP3D012A065B
DIODE SIL CARB 650V 12A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D012A065B is a 650V Silicon Carbide Schottky diode designed for high-performance applications. This through-hole component is housed in a TO-247-2 package, offering a robust thermal interface. It features a maximum forward voltage (Vf) of 1.5V at 12A and an average rectified forward current (Io) of 12A. The reverse leakage current at its maximum reverse voltage (Vr) of 650V is a low 30 µA. Notably, this device exhibits zero reverse recovery time (trr) for currents greater than 500mA (Io), a characteristic of advanced SiC technology. Operating junction temperatures range from -55°C to 175°C. This diode is suitable for power conversion systems in industries such as electric vehicle charging, industrial power supplies, and renewable energy.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 572pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
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