GP3D012A065A
DIODE SIL CARB 650V 12A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ GP3D012A065A is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. This through-hole component, housed in a TO-220-2 package, features a maximum DC reverse voltage of 650 V and a continuous average rectified current handling capability of 12 A. The forward voltage drop at 12 A is a maximum of 1.5 V. With a junction operating temperature range of -55°C to 175°C, it exhibits a low reverse leakage current of 30 µA at 650 V and a capacitance of 572 pF at 1 V and 1 MHz. Notably, the GP3D012A065A demonstrates zero reverse recovery time above 500 mA, making it suitable for demanding power supply, motor drive, and industrial power systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 572pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
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