GP3D010A170B
DIODE SIL CARB 1.7KV 39A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
Quality Control: Learn More
SemiQ Amp+™ GP3D010A170B is a Silicon Carbide Schottky diode featuring a 1700 V reverse voltage rating and a 39 A average rectified current capability. This device, housed in a TO-247-2 package with a through-hole mounting type, offers a maximum forward voltage drop of 1.65 V at 10 A. Its low reverse leakage current is specified at 40 µA at 1700 V, with a capacitance of 699 pF at 1 V and 1 MHz. The GP3D010A170B operates across a junction temperature range of -55°C to 175°C and exhibits no recovery time above 500 mA. This component is utilized in applications such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 699pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 39A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1700 V |
Request a Quote
Clients Also Buy
GP3D020A065U
DIODE ARR SIC 650V 10A TO247-3
GP3D030A065B
DIODE SIL CARB 650V 30A TO247-2
GP3D020A170B
DIODE SIL CARB 1.7KV 67A TO247-2
