GP3D010A120B
DIODE SIL CARB 1.2KV 10A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ SiC Schottky diode, part number GP3D010A120B, offers a 1200V reverse voltage rating and 10A average rectified current. This TO-247-2 packaged component features a low forward voltage of 1.65V at 10A and a reverse leakage current of 20 µA at 1200V. Its Silicon Carbide technology ensures exceptional performance with a zero reverse recovery time (trr), even at currents exceeding 500mA. The diode operates across a junction temperature range of -55°C to 175°C and has a capacitance of 608pF at 1V and 1MHz. This through-hole mounted component is suitable for demanding applications in power factor correction, inverters, and electric vehicle charging systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 608pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
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