GP3D010A120A
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D010A120A is a Silicon Carbide (SiC) Schottky diode with a maximum DC reverse voltage of 1200 V and an average rectified forward current of 10 A. This through-hole component, housed in a TO-220-2 package, exhibits a typical forward voltage drop of 1.65 V at 10 A. It features a low reverse leakage current of 20 µA at 1200 V and a capacitance of 608 pF at 1V and 1MHz. The diode's operating junction temperature range is -55°C to 175°C, and it is characterized by a zero reverse recovery time for currents exceeding 500 mA. This component finds application in power conversion systems across various industries, including electric vehicle charging, industrial power supplies, and renewable energy.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 608pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
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