GP3D010A065B
DIODE SIL CARB 650V 10A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D010A065B is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a 650V reverse voltage rating and a maximum forward current of 10A. Its low forward voltage drop of 1.6V at 10A and negligible reverse recovery time (0 ns, with no recovery time > 500mA) contribute to enhanced efficiency and reduced switching losses, making it suitable for power conversion systems in industries such as electric vehicles, industrial power supplies, and renewable energy. The GP3D010A065B is housed in a TO-247-2 package and operates within a junction temperature range of -55°C to 175°C. It exhibits a reverse leakage current of 25 µA at 650V and a capacitance of 419pF at 1V, 1MHz.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 419pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
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