GP3D010A065A
DIODE SIL CARB 650V 10A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
Quality Control: Learn More
The SemiQ Amp+™ GP3D010A065A is a 650V, 10A Silicon Carbide (SiC) Schottky diode housed in a TO-220-2 package. This through-hole component exhibits a maximum forward voltage (Vf) of 1.6V at 10A and a reverse leakage current of 25 µA at its maximum reverse voltage of 650V. With a junction operating temperature range of -55°C to 175°C, it features a capacitance of 419pF at 1V and 1MHz. Notably, this SiC device demonstrates no reverse recovery time above 500mA, making it suitable for applications demanding high efficiency and reduced switching losses. Common industry applications include power factor correction, power supplies, and motor drives.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 419pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
Request a Quote
Clients Also Buy
GP3D010A170B
DIODE SIL CARB 1.7KV 39A TO247-2
GP3D020A065U
DIODE ARR SIC 650V 10A TO247-3
GP3D030A065B
DIODE SIL CARB 650V 30A TO247-2
