GP3D008A065A
DIODE SIL CARB 650V 8A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ's Amp+™ GP3D008A065A is a Silicon Carbide Schottky diode, rated for 650V and 8A. This through-hole component, packaged in a TO-220-2, features a typical forward voltage of 1.6V at 8A and a minimal reverse leakage current of 20 µA at 650V. With a junction operating temperature range of -55°C to 175°C, it exhibits zero reverse recovery time for currents greater than 500mA (Io). The diode's capacitance at 1V and 1MHz is 336pF. This device is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 336pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 8 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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