GP3D006A065A
DIODE SIL CARB 650V 20A TO220-2LManufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D006A065A is a 650 V Silicon Carbide (SiC) Schottky diode, designed for high-efficiency power conversion applications. This component features a maximum forward voltage (Vf) of 1.55 V at 6 A and an average rectified current (Io) of 20 A. The reverse leakage current at 650 V is a low 15 µA. With a junction operating temperature range of -55°C to 175°C, it offers robust performance in demanding environments. The device exhibits no significant reverse recovery time for currents greater than 500mA (Io). Its TO-220-2L package with through-hole mounting facilitates integration into power supply circuits, motor drives, and renewable energy systems. The capacitance at 1V and 1MHz is 229pF.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 229pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 6 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 650 V |
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