GP3D005A170B
DIODE SIL CARB 1.7KV 21A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ's Amp+™ SiC Schottky diode, part number GP3D005A170B, offers a robust solution for high-voltage applications. This TO-247-2 packaged component features a 1700 V reverse voltage rating and a 21 A average rectified current capability. Its Silicon Carbide technology ensures exceptional performance with a low forward voltage drop of 1.65 V at 5 A and a minimal reverse leakage current of 20 µA at 1700 V. The device exhibits no discernible reverse recovery time above 500 mA (Io), making it ideal for demanding power conversion tasks. Operating across a junction temperature range of -55°C to 175°C, the GP3D005A170B is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems. Its through-hole mounting design and TO-247-2 package facilitate integration into existing circuit architectures.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 347pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 21A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 5 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1700 V |
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