GP2D060A120B
DIODE SIL CARB 1.2KV 60A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP2D060A120B is a Silicon Carbide Schottky diode designed for high-power applications. Featuring a 1200 V reverse voltage rating and a 60 A average rectified current capability, this component offers a low forward voltage drop of 1.8 V at 60 A. Its TO-247-2 through-hole package ensures robust thermal performance with an operating junction temperature range of -55°C to 175°C. The device exhibits minimal reverse leakage current at its maximum voltage, specified at 500 µA @ 1200 V. Notably, it boasts no recovery time for currents exceeding 500 mA (Io), a critical characteristic for high-frequency switching. This diode is commonly employed in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 3809pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 60A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 1200 V |
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