GP2D050A120B
DIODE SIL CARB 1.2KV 50A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ's Amp+™ GP2D050A120B is a Silicon Carbide Schottky diode designed for high-voltage, high-current applications. This component offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 50 A. The forward voltage drop at 50 A is a maximum of 1.8 V. It features a TO-247-2 through-hole package, ideal for robust thermal management. The device exhibits a low reverse leakage current of 100 µA at 1200 V and a capacitance of 3174 pF at 1V and 1MHz. Operating across a junction temperature range of -55°C to 175°C, the GP2D050A120B is suitable for power factor correction, solid-state circuit breakers, and inverter applications within the industrial and automotive sectors. This diode is characterized by its absence of reverse recovery time for currents above 500 mA.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 3174pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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