GP2D030A120B
DIODE SIL CARB 1.2KV 30A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ's Amp+™ series GP2D030A120B is a Silicon Carbide (SiC) Schottky diode with a maximum reverse voltage rating of 1200 V. This through-hole component, housed in a TO-247-2 package, offers a forward voltage drop of 1.8 V at a continuous forward current of 30 A. Featuring an average rectified current capability of 30 A, it exhibits a low reverse leakage of 60 µA at 1200 V. The device demonstrates no discernible reverse recovery time at 500 mA and above, indicative of its high-speed switching characteristics. With a junction operating temperature range of -55°C to 175°C and a capacitance of 1905pF at 1V and 1MHz, the GP2D030A120B is suitable for demanding applications in power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1905pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
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