GP2D020A170B
DIODE SIL CARB 1.7KV 20A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP2D020A170B is a 1700V, 20A Silicon Carbide (SiC) Schottky diode in a TO-247-2 package. This through-hole component features a maximum forward voltage (Vf) of 1.75V at 20A and a low reverse leakage current of 40 µA at 1700V. The device exhibits no recovery time above 500mA, indicative of its Schottky barrier characteristics. With a junction operating temperature range of -55°C to 175°C and a capacitance of 1624pF at 1V and 1MHz, this SiC diode is suitable for demanding power applications in industries such as industrial power supplies and electric vehicle charging infrastructure.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1624pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1700 V |
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