GP2D020A120B
DIODE SIL CARB 1.2KV 20A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
Quality Control: Learn More
SemiQ Amp+™ series GP2D020A120B is a 1200V, 20A Silicon Carbide (SiC) Schottky diode. This through-hole component is housed in a TO-247-2 package. It features a maximum forward voltage (Vf) of 1.8V at 20A and a reverse leakage current of 40 µA at 1200V. The device exhibits no recovery time above 500mA (Io). Operating junction temperature ranges from -55°C to 175°C. Applications for this component include high-voltage power supplies, industrial motor drives, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1270pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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