GP2D020A065B
DIODE SIL CARB 650V 20A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
Quality Control: Learn More
SemiQ's Amp+™ series GP2D020A065B is a 650V, 20A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-2 package, offers a forward voltage (Vf) of 1.65V at 20A and a reverse leakage current of 200 µA at 650V. Key performance characteristics include a junction operating temperature range of -55°C to 175°C and a capacitance of 1054pF at 1V and 1MHz. The device exhibits no significant reverse recovery time for currents greater than 500mA. This SiC diode is suitable for applications in power conversion, electric vehicles, and industrial power supplies where high efficiency and robust performance are critical.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1054pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Request a Quote
Clients Also Buy
GP3D010A170B
DIODE SIL CARB 1.7KV 39A TO247-2
GP3D020A065U
DIODE ARR SIC 650V 10A TO247-3
GP3D030A065B
DIODE SIL CARB 650V 30A TO247-2
