GP2D010A170B
DIODE SIL CARB 1.7KV 10A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
Quality Control: Learn More
SemiQ Amp+™ GP2D010A170B is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This component features a 1700 V reverse voltage rating and a 10 A average forward current capability. The GP2D010A170B exhibits a low forward voltage drop of a maximum 1.75 V at 10 A, contributing to efficient power conversion. Its ultra-fast switching speed is characterized by a reverse recovery time of 0 ns, with no recovery time exceeding 500 mA. The diode operates within a junction temperature range of -55°C to 175°C and has a reverse leakage current of 20 µA at 1700 V. This device is housed in a TO-247-2 package for through-hole mounting. Applications include power factor correction, inverters, and electric vehicle charging systems. The capacitance @ Vr, F is 812pF @ 1V, 1MHz.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 812pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1700 V |
Request a Quote
Clients Also Buy
GP3D010A170B
DIODE SIL CARB 1.7KV 39A TO247-2
GP3D020A065U
DIODE ARR SIC 650V 10A TO247-3
GP3D030A065B
DIODE SIL CARB 650V 30A TO247-2
