GP2D010A120A
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ's Amp+™ series GP2D010A120A is a Silicon Carbide Schottky diode rated for 1200V (Vr) and 10A (Io). This through-hole component, housed in a TO-220-2 package, features a high forward voltage drop of 1.8V at 10A. The device exhibits minimal reverse leakage current of 20 µA at its maximum reverse voltage and boasts a fast switching characteristic with no recovery time greater than 500mA. Its low junction capacitance of 635pF at 1V and 1MHz, coupled with an operating temperature range of -55°C to 175°C, makes it suitable for demanding applications in power supply units, motor drives, and renewable energy systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 635pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
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