GCMX040A120B3H1P
SIC 1200V 40M MOSFET FULL-BRIDGEManufacturer: SemiQ
Categories: FET, MOSFET Arrays
Quality Control: Learn More
SemiQ GCMX040A120B3H1P is a Silicon Carbide (SiC) MOSFET full-bridge module designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 1200V (1.2kV) and a continuous Drain Current (Id) of 53A at 25°C (Tc), with a maximum power dissipation of 208W (Tc). The module offers a low on-resistance (Rds On) of 52mOhm at 40A and 20V, and a gate charge (Qg) of 125nC at 20V. Input capacitance (Ciss) is specified at a maximum of 3200pF at 800V. The GCMX040A120B3H1P is configured as a 4 N-Channel full bridge and utilizes a chassis mount package. It operates within an ambient temperature range of -40°C to 175°C (TJ). This device is suitable for demanding industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 208W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 800V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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