GCMX020A120B2H1P
SIC 1200V 20M MOSFET FULL-BRIDGEManufacturer: SemiQ
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The SemiQ GCMX020A120B2H1P is a Silicon Carbide (SiC) MOSFET module featuring a 1200V (1.2kV) drain-source voltage. This full-bridge configuration comprises four N-channel MOSFETs, delivering a continuous drain current of 102A (Tc) at 25°C and a maximum power dissipation of 333W (Tc). Key electrical characteristics include an Rds On of 28mOhm at 50A and 20V, input capacitance (Ciss) of 5600pF at 800V, and gate charge (Qg) of 222nC at 20V. With a threshold voltage (Vgs(th)) of 4V at 20mA, the device operates across an extended temperature range of -40°C to 175°C (TJ). This module is designed for chassis mounting and is suitable for applications in power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 333W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 800V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 222nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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