GCMX020A120B2B1P
SIC 1200V 20M MOSFET HALF-BRIDGEManufacturer: SemiQ
Categories: FET, MOSFET Arrays
Quality Control: Learn More
SemiQ GCMX020A120B2B1P is a Silicon Carbide (SiC) MOSFET half-bridge module designed for high-power applications. This component features a 1200V (1.2kV) drain-source voltage (Vdss) and a continuous drain current (Id) of 102A at 25°C (Tc). The module offers a maximum power dissipation of 385W (Tc) and a low on-resistance (Rds On) of 28mOhm at 50A and 20V. Key parameters include a gate charge (Qg) of 241nC at 20V and an input capacitance (Ciss) of 6500pF at 800V. The GCMX020A120B2B1P is chassis mountable and operates within a temperature range of -40°C to 175°C (TJ). This robust SiC MOSFET array is suitable for use in power conversion systems, electric vehicle powertrains, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 385W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 800V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 241nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
Request a Quote
Clients Also Buy
GCMX040A120B3H1P
SIC 1200V 40M MOSFET FULL-BRIDGE
GCMX005A120B3B1P
SIC 1200V 5M MOSFET HALF-BRIDGE
GCMX020A120B2H1P
SIC 1200V 20M MOSFET FULL-BRIDGE
