GCMX010A120B3B1P
SIC 1200V 10M MOSFET HALF-BRIDGEManufacturer: SemiQ
Categories: FET, MOSFET Arrays
Quality Control: Learn More
SemiQ GCMX010A120B3B1P is a Silicon Carbide (SiC) MOSFET Half-Bridge module. This device features a Drain to Source Voltage (Vdss) of 1200V (1.2kV) and a continuous Drain Current (Id) of 173A at 25°C (Tc). The module offers a low on-resistance of 14mOhm maximum at 100A and 20V. Key parameters include Gate Charge (Qg) of 483nC maximum at 20V and Input Capacitance (Ciss) of 13800pF maximum at 800V. The power dissipation is rated at 577W (Tc). The GCMX010A120B3B1P is designed for chassis mounting and operates within a temperature range of -40°C to 175°C (TJ). This component is suitable for applications in electric vehicle charging, industrial power supplies, and motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 577W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 173A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 13800pF @ 800V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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