GCMX010A120B2B1P
SIC 1200V 10M MOSFET HALF-BRIDGEManufacturer: SemiQ
Categories: FET, MOSFET Arrays
Quality Control: Learn More
SemiQ GCMX010A120B2B1P is a Silicon Carbide (SiC) MOSFET module designed for high-power applications. This component features a 1200V (1.2kV) drain-source voltage (Vdss) rating and a continuous drain current (Id) of 214A at 25°C (Tc), with a maximum power dissipation of 750W (Tc). The GCMX010A120B2B1P offers a low on-resistance of 12mOhm at 100A and 20V. Its half-bridge configuration comprises two N-channel MOSFETs, suitable for demanding power conversion tasks. With a gate charge (Qg) of 476nC at 20V and input capacitance (Ciss) of 13100pF at 800V, it facilitates efficient switching. This module is chassis mountable and operates across a temperature range of -40°C to 175°C (TJ). It is utilized in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 750W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 214A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 13100pF @ 800V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 100A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 476nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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