GCMX005A120B3B1P
SIC 1200V 5M MOSFET HALF-BRIDGEManufacturer: SemiQ
Categories: FET, MOSFET Arrays
Quality Control: Learn More
SemiQ GCMX005A120B3B1P is a Silicon Carbide (SiC) MOSFET half-bridge module designed for high-power applications. This component features a 1200V (1.2kV) drain-source voltage capability and a continuous drain current rating of 383A (Tc). The module offers a maximum power dissipation of 1.154kW (Tc) and utilizes a chassis mount configuration for efficient thermal management. Key electrical characteristics include a low on-resistance of 7mOhm @ 200A, 20V, and a gate charge of 927nC @ 20V. Input capacitance (Ciss) is rated at a maximum of 23500pF @ 800V, with a threshold voltage (Vgs(th)) of 4V @ 80mA. Operating temperature ranges from -40°C to 175°C (TJ). This device is suitable for demanding sectors such as electric vehicle powertrains, renewable energy inverters, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.154kW (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 383A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 23500pF @ 800V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 200A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 927nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 80mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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