GP3D060A120U
DIODE ARR SIC 1200V 30A TO247-3Manufacturer: SemiQ
Categories: Diode Arrays
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SemiQ Amp+™ GP3D060A120U is a Silicon Carbide (SiC) Schottky diode array designed for high-performance power applications. This through-hole component features a TO-247-3 package, offering a robust solution for demanding environments. With a maximum DC reverse voltage rating of 1200 V and an average rectified current capability of 30 A per diode, it provides excellent power handling. The forward voltage drop is a nominal 1.7 V at 30 A, and the reverse leakage current is a low 60 µA at 1200 V. Notably, the GP3D060A120U exhibits zero reverse recovery time above 500 mA, contributing to reduced switching losses. Its operating junction temperature range is -55°C to 175°C. This device is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) (per Diode) | 30A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
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