GP3D040A120U
DIODE ARR SIC 1200V 20A TO247-3Manufacturer: SemiQ
Categories: Diode Arrays
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The SemiQ Amp+™ GP3D040A120U is a Silicon Carbide (SiC) Schottky diode array designed for high-performance applications. This component features one pair of common cathode diodes, offering a 1200 V DC reverse voltage rating and a continuous average rectified current of 20 A per diode. The forward voltage drop is specified at a maximum of 1.65 V at 20 A. Exhibiting a reverse leakage current of only 40 µA at 1200 V, this device demonstrates excellent blocking characteristics. Notably, the GP3D040A120U boasts a zero reverse recovery time, contributing to higher switching frequencies and reduced switching losses. Its through-hole mounting in a TO-247-3 package facilitates integration into power supply designs, motor drives, and renewable energy systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 20 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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