GP3D024A065U
DIODE ARR SIC 650V 12A TO247-3Manufacturer: SemiQ
Categories: Diode Arrays
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SemiQ Amp+™ GP3D024A065U is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a 650V reverse voltage rating and a per-diode average rectified current of 12A. The GP3D024A065U exhibits a low forward voltage drop of 1.5V at 12A and a minimal reverse leakage of 30 µA at 650V. Notably, it specifies no recovery time for currents greater than 500mA (Io). This device operates across a junction temperature range of -55°C to 175°C and is supplied in tube packaging. Its performance characteristics make it suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 12A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
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