GP3D020A120U
DIODE ARR SIC 1200V 10A TO247-3Manufacturer: SemiQ
Categories: Diode Arrays
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SemiQ Amp+™ GP3D020A120U is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component is housed in a TO-247-3 package, offering a 1200V reverse voltage rating and a continuous forward current of 10A per diode. Key performance characteristics include a low forward voltage drop of 1.65V at 10A and a reverse leakage current of 20 µA at 1200V. Notably, this SiC device exhibits zero reverse recovery time above 500mA, contributing to enhanced switching efficiency. Operating across a junction temperature range of -55°C to 175°C, the GP3D020A120U is suitable for high-power applications in industries such as renewable energy, electric vehicles, and industrial power supplies.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
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