GP2D040A120U
DIODE ARR SIC 1200V 65A TO247-3Manufacturer: SemiQ
Categories: Diode Arrays
Quality Control: Learn More
SemiQ Amp+™ GP2D040A120U is a Silicon Carbide Schottky diode array featuring a common cathode configuration. This component offers a blocking voltage of 1200V with a continuous forward current rating of 65A per diode. The forward voltage drop at 20A is a maximum of 1.8V. Reverse leakage current is rated at 40 µA at 1200V. Designed for high-temperature operation, the junction temperature range is -55°C to 175°C. The device is packaged in a TO-247-3 through-hole package, supplied in tubes. This diode array is suitable for applications in power conversion, electric vehicle charging, and industrial motor drives where efficiency and high voltage handling are critical.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 65A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
Request a Quote
Clients Also Buy
GP3D010A170B
DIODE SIL CARB 1.7KV 39A TO247-2
GP3D020A065U
DIODE ARR SIC 650V 10A TO247-3
GP3D030A065B
DIODE SIL CARB 650V 30A TO247-2
