GP2D010A120U
DIODE ARR SIC 1200V 17A TO247-3Manufacturer: SemiQ
Categories: Diode Arrays
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SemiQ Amp+™ GP2D010A120U is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This device offers a maximum DC reverse voltage of 1200 V and a continuous average rectified current per diode of 17 A. The forward voltage drop is specified at 1.8 V at 5 A. Designed for through-hole mounting in a TO-247-3 package, it operates across a junction temperature range of -55°C to 175°C. The diode exhibits a low reverse leakage current of 10 µA at 1200 V and no significant recovery time for currents exceeding 500 mA. This component is suitable for applications in industrial power supplies and electric vehicle charging infrastructure.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 17A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
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