GHXS050B120S-D3
DIODE MOD SIC 1200V 101A SOT227Manufacturer: SemiQ
Categories: Diode Arrays
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SemiQ GHXS050B120S-D3 is a Silicon Carbide (SiC) Schottky diode array featuring two independent diodes. Each diode is rated for a maximum DC reverse voltage of 1200V and an average rectified current of 101A. The forward voltage drop (Vf) is a maximum of 1.7V at 50A. This device exhibits no reverse recovery time above 500mA, contributing to high-efficiency operation. The reverse leakage current is specified at 100 µA at 1200 V. Housed in a SOT-227-4, miniBLOC package, this component is designed for chassis mounting. The operating junction temperature range is -55°C to 175°C. This component is suitable for applications in high-power conversion, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 101A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 50 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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