2SC3599E
NPN EPITAXIAL PLANAR SILICONManufacturer: Sanyo
Categories: Single Bipolar Transistors
Quality Control: Learn More
Bipolar (BJT) Transistor NPN 120 V 300 mA 500MHz 1.2 W Through Hole TO-126
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 7mA, 70mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | TO-126 |
| Grade | - |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 1.2 W |
| Qualification | - |
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