CPH6531-TL-E
PNP SILICON TRANSISTORManufacturer: Sanyo
Categories: Bipolar Transistor Arrays
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Sanyo PNP Silicon Transistor Array, part number CPH6531-TL-E, is a dual PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 1A. It features a transition frequency of 420MHz and a maximum power dissipation of 1.1W. The device exhibits a typical DC current gain (hFE) of 200 at 100mA and 2V, with a Vce(sat) of 380mV at 10mA and 500mA. The operating junction temperature range is specified up to 150°C. The CPH6531-TL-E is housed in a 6-lead SOT-23-6 Thin (TSOT-23-6) surface mount package. This component is suitable for use in applications requiring compact switching and amplification, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 1.1W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 380mV @ 10mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 420MHz |
| Supplier Device Package | 6-CPH |
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