K4B4G1646E-BYK000
DDR3-1600 4GB (256MX16)1.25NS CLManufacturer: Samsung Semiconductor, Inc.
Categories: Memory
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Samsung Semiconductor, Inc. K4B4G1646E-BYK000 is a 4Gbit volatile DRAM component with a parallel interface. This memory IC operates at a clock frequency of 800 MHz, offering a memory organization of 256M x 16. The component features a 1.35V supply voltage and a 1.25ns CAS Latency, supporting DDR3-1600 specifications. It is supplied in a 96-TFBGA package suitable for surface mounting. Typical applications for this memory component include consumer electronics and computing systems. The operating temperature range is 0°C to 95°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 96-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C |
| Voltage - Supply | 1.35V |
| Clock Frequency | 800 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
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