K4B1G1646I-BYMA000
DDR3-1866 1GB (64MX16)1.07NS CL1Manufacturer: Samsung Semiconductor, Inc.
Categories: Memory
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Samsung Semiconductor, Inc. presents the K4B1G1646I-BYMA000, a 1Gbit volatile memory component. This DRAM device features a parallel interface with a memory organization of 64M x 16, operating at a clock frequency of 933 MHz. It offers a data rate of DDR3-1866 with a CAS latency of CL1 and a typical access time of 1.07 nanoseconds. The component is housed in a 96-TFBGA package, designed for surface mounting. It operates with a supply voltage of 1.35V and has an operating temperature range of 0°C to 95°C. This memory solution is suitable for applications in computing, networking, and industrial systems requiring high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 96-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C |
| Voltage - Supply | 1.35V |
| Clock Frequency | 933 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
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