EML20T2R
TRANS PREBIAS NPN 50V 0.1A EMT6Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor's EML20T2R is an NPN pre-biased bipolar transistor featuring an integrated base resistor (R1 = 2.2 kOhms) and a base-emitter resistor (R2 = 47 kOhms). This component is designed for simplified circuit configurations. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is 250MHz, with a maximum power dissipation of 150mW. The transistor type is NPN - Pre-Biased + Diode, and it operates with a DC current gain (hFE) of a minimum of 80 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is 300mV maximum at 250µA base current and 5mA collector current. The EML20T2R is supplied in an EMT6 package, suitable for surface mount applications. It is commonly utilized in industrial automation and consumer electronics. The packaging is Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased + Diode |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | EMT6 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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