DTD743ZMT2L
TRANS PREBIAS NPN 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTD743ZMT2L is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 30 V and a maximum collector current of 200 mA. The transition frequency is specified at 260 MHz, with a maximum power dissipation of 150 mW. It includes integrated base resistors with values of 4.7 kOhms (R1) and 47 kOhms (R2), providing a minimum DC current gain (hFE) of 140 at 100 mA and 2 V. The Vce saturation is a maximum of 300 mV at 2.5 mA and 50 mA. The DTD743ZMT2L is housed in a VMT3 (SOT-723) package, suitable for surface mounting and supplied on tape and reel. This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring compact signal amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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