DTD743ZETL
TRANS PREBIAS NPN 30V 0.2A EMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor NPN Pre-Biased Transistor, DTD743ZETL, offers a 30 V collector-emitter breakdown voltage and a 200 mA collector current. This surface mount component, packaged in an EMT3 (SC-75, SOT-416), features an integrated base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 10 kOhms. With a transition frequency of 260 MHz and a minimum DC current gain (hFE) of 140 at 100 mA and 2 V, it is suitable for applications requiring simplified biasing. The maximum power dissipation is 150 mW. This device finds utility in various electronic circuits, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | EMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
DTA143ECAT116
TRANS PREBIAS PNP 50V 0.1A SST3
DTC015TUBTL
TRANS PREBIAS NPN 50V UMT3F
DTC144EU3HZGT106
TRANS PREBIAS NPN 50V 0.1A UMT3
