DTD743XMT2L
TRANS PREBIAS NPN 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTD743XMT2L is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 30V and a maximum collector current of 200mA. With a transition frequency of 260MHz and a maximum power dissipation of 150mW, it is suitable for applications requiring moderate gain and switching speeds. The integrated base resistors are R1 at 4.7 kOhms and R2 at 10 kOhms, providing a typical DC current gain (hFE) of 140 at 100mA and 2V. The Vce saturation is rated at a maximum of 300mV at 2.5mA base current and 50mA collector current. This component is supplied in a VMT3 (SOT-723) surface mount package, delivered on tape and reel. It finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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