DTD713ZMT2L
TRANS PREBIAS NPN 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTD713ZMT2L is an NPN pre-biased bipolar transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 200mA. The transistor exhibits a transition frequency of 260MHz, with a minimum DC current gain (hFE) of 140 at 100mA and 2V. Integrated base resistors of 1kO (R1) and emitter base resistors of 10kO (R2) are included, simplifying circuit design. The DTD713ZMT2L has a maximum power dissipation of 150mW and is supplied in the VMT3 package, equivalent to SOT-723, on tape and reel. This component is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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