DTD713ZETL
TRANS PREBIAS NPN 30V 0.2A EMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor DTD713ZETL is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 200mA. The built-in base resistors, R1 at 1 kOhm and R2 at 10 kOhm, facilitate simplified circuit design. With a transition frequency of 260 MHz and a maximum power dissipation of 150mW, this transistor is suitable for applications requiring moderate switching speeds and low power consumption. The minimum DC current gain (hFE) is 140 at 100mA and 2V. The device is supplied in an EMT3 package, also known as SC-75 or SOT-416, on tape and reel. This transistor finds use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | EMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
DTA143ECAT116
TRANS PREBIAS PNP 50V 0.1A SST3
DTC015TUBTL
TRANS PREBIAS NPN 50V UMT3F
DTC144EU3HZGT106
TRANS PREBIAS NPN 50V 0.1A UMT3