DTD543XMT2L
TRANS PREBIAS NPN 12V 0.5A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTD543XMT2L, is a surface mount component designed for general-purpose switching and amplification applications. This VMT3 packaged transistor features a 12V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 260MHz and a power dissipation of 150mW, it is suitable for use in consumer electronics and industrial automation. The internal base resistor (R1) is 4.7 kOhms and the emitter base resistor (R2) is 10 kOhms, contributing to its pre-biased configuration. Key parameters include a minimum DC current gain (hFE) of 140 at 100mA and 2V, and a Vce saturation of 300mV at 5mA and 100mA. This device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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