DTD513ZMGT2L
TRANS PREBIAS NPN 12V 0.5A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTD513ZMGT2L is an NPN pre-biased bipolar transistor designed for efficient switching and amplification applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 500mA. With a transition frequency of 260MHz and a power dissipation rating of 150mW, it is suitable for demanding signal processing tasks. The internal base resistor (R1) is 1 kOhm, and the emitter base resistor (R2) is 10 kOhm, providing inherent biasing. Housed in a compact SOT-723 (VMT3) surface mount package, this device is supplied on tape and reel. The DTD513ZMGT2L finds utility in consumer electronics and industrial automation where precise control and compact design are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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