DTD143TKT146
TRANS PREBIAS NPN 40V 0.5A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTD143TKT146 is a pre-biased NPN bipolar transistor. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a transition frequency of 200MHz and a power dissipation of 200mW. The internal base resistor (R1) is specified at 4.7 kOhms. The transistor type is NPN with pre-bias, and it is available in a SMT3 package, specifically TO-236-3, SC-59, SOT-23-3, supplied on tape and reel. It finds application in various industrial sectors requiring simplified switching and amplification circuits. The DC current gain (hFE) is a minimum of 100 at 50mA and 5V, with a Vce saturation of 300mV at 2.5mA and 50mA. Collector cutoff current (ICBO) is a maximum of 500nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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