DTD143ESTP
TRANS PREBIAS NPN 50V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTD143ESTP is an NPN pre-biased bipolar transistor featuring integrated base-emitter resistors. This through-hole component, supplied in SPT packaging on tape and reel, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 300mW, it is characterized by a minimum DC current gain (hFE) of 47 at 50mA and 5V. The internal bias network consists of a 4.7kO base resistor (R1) and a 4.7kO emitter-base resistor (R2), simplifying circuit design by eliminating the need for external biasing components. This device is commonly utilized in general-purpose switching and amplification applications across various industrial sectors, including consumer electronics and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased + Diode |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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