DTD143ECT216
TRANS PREBIAS NPN 50V 0.5A SST3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTD143ECT216 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component, part of the single, pre-biased bipolar transistor category, features built-in resistors for simplified circuit design. The DTD143ECT216 offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA, with a transition frequency of 200 MHz. It is supplied in a SST3 package (TO-236-3, SC-59, SOT-23-3) on tape and reel. Key parameters include a maximum power dissipation of 200 mW, a minimum DC current gain (hFE) of 47 at 50mA, 5V, and a Vce saturation of 300mV at 2.5mA, 50mA. The base resistors are specified as 4.7 kOhms for both R1 and R2. Applications for this transistor include industrial automation, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SST3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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